AN APPROACH OF DRAIN CURRENT MODEL BASED ON GENETIC ALGORITHM COMPUTATION TO STUDY THE PENTACENE THIN FILM TRANSISTORS

Published 30 november 2020 •  vol 144  • 


Authors:

 

Meriem Ouarghi, LEA, Department of Electronics, University of Batna, Algeria
Zohir Dibi, LEA, Department of Electronics, University of Batna, Algeria
Nacereddine Lakhder, LEA, Department of Electronics, University of Batna, Algeria
Rachida Bouchouereb, LEA, Department of Electronics, University of Batna, Algeria
Malika Ouacifi, LEA, Department of Electronics, University of Batna, Algeria
Nour-elhouda Hidjazi, LEA, Department of Electronics, University of Batna, Algeria

Abstract:

 

Mobile Ad hoc networks are Immediate and temporary networks with a dynamic topology which doesn’t have any established infrastructure or centralized administration. Due to the nature of this type of network such as low power nodes, limited bandwidth and Mobility of nodes are constantly makes failure path in these networks, Routing issue is important. To increase reliability and reduce the overhead can be use multiple support paths so that in case any path fails, other paths can be used. One of such protocols is SMR, which increases reliability by creating several maximally disjoint paths between the source node and the destination node. This paper aims to reduce the routing overhead of SMR protocol By changes Route Maintenance Mechanism. Simulation results demonstrate the improvement of the proposed protocol, especially when the network scale and speed of nodes is increased.

Keywords:

 

TFT; Mobility Modeling, Pentacene TFT, Genetic Algorithm

References:

 

[1] Horowitz, G., Adv. Mater. 10 (1998) 365.
[2] M. Shur, M. Hack, J. Appl. Phys. 55 (1984) 3831.
[3] C.D. Dimitrakopoulos, A.R. Brown, A. Pomp, J. Appl. Phys. 80 (1996) 2501.
[4] Y.Y. Lin, D.J. Gundlach, T.N. Jackson, S.F. Nelson, IEEE Trans. Dev. 44 (1997) 1325.
[5] G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bouirguiga, M. Hajlaoui, Adv. Mater. 10 (1998) 923–927.
[6] P.V. Necludov, M. Shur, Solid-State Electron. 47 (2003) 259–262.
[7] H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C.D. Shraw, J.A. Nichols, T. Jackson, Solid-State Electron. 47 (2003) 297–301.
[8] M.S. Shur, D. Veksler, V. Chivukula, A. Koudymov, T. Ytterdal, B. I ˇniguez, W. Jckson, ECS Proceedings, 2007 Int. Conf. on Semie. Tech. on the Future Conver- gence of ULSICs and TFT Technology, Barga, Tuscany, Italy, July 19 to August 3, 2007.
[9] S. Mansouria, G.Horowitzb, R.Bourguigaa” Modeling of mobility in organic thin-film transistor based octithiophene (8T)” Synthetic Metals 160 (2010) 1787–1792.
[10] M. Estrada a,*, A. Cerdeira a, J. Puigdollers b, L. Rese´ndiz a, J. Pallares c,L.F. Marsal c, C. Voz b, B. In˜iguez c” Accurate modeling and parameter extraction method for organic TFTs “Solid-State Electronics 49 (2005) 1009–1016.
[11] P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson” Modeling of organic thin film transistors of different designs” J. Appl. Phys. 88, 6594 (2000).
[12] Klauk H, Halik M, Zschieschang U, Eder F, Schmid G, Dehm C., "Pentacene organic transistors and ring oscillators on glass and on flexible polymeric substrates". Appl Phys Lett 2003;82:4175.
[13] Cerdeira A, Estrada M, Garcia R, Ortiz Conde A, Garcia FJ. New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions. Solid-State Electron 2001;45:1077.

Citations:

 

APA:
Ouarghi, M., Dibi, Z., Lakhder, N., Bouchouereb, R., Ouacifi, M., & Hidjazi, N.-E. (2020). An Approach of Drain Current Model Based on Genetic Algorithm Computation to Study the Pentacene Thin Film Transistors. International Journal of Advanced Science and Technology (IJAST), ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, 144, 57-62. doi: 10.33832/ijast.2020.144.05.

MLA:
Ouarghi, Meriem, et al. “An Approach of Drain Current Model Based on Genetic Algorithm Computation to Study the Pentacene Thin Film Transistors.” International Journal of Advanced Science and Technology, ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, vol. 144, 2020, pp. 57-62. IJAST, http://article.nadiapub.com/IJAST/Vol144/5.html.

IEEE:
[1] M. Ouarghi, Z. Dibi, N. Lakhder, R. Bouchouereb, M. Ouacifi, and N.-E. Hidjazi, "An Approach of Drain Current Model Based on Genetic Algorithm Computation to Study the Pentacene Thin Film Transistors." International Journal of Advanced Science and Technology (IJAST), ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, vol. 144, pp. 57-62, November 2020.