MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS USING GENETIC ALGORITHM AND PARTICLE SWARM OPTIMIZATION

Published 30 June 2020 •  vol 139  • 


Authors:

 

F. Menacer, LEA, Department of electronics, University of Batna 2, Algeria
A. Kadri, LEA, Department of electronics, University of Batna 2, Algeria
Z. Dibi, LEA, Department of electronics, University of Batna 2, Algeria

Abstract:

 

This article introduces a simple model current-voltage carbon nanotube field effect transistor (CNTFET), which describes its behavior for above and below threshold regime. The main objective of this work is to extract the optimal parameters of CNTFET features. The analytical extraction methods have some limitations; in order to raise these ones we focus our work on using the genetic algorithm (GA) and particle swarm optimization (PSO) as metaheuristic tools. The GA and PSO are applied to extract the optimal parameters of the model and to be able to simulate their behavior at nanoscale regime. Among these parameters, we shall note by way of example, there is the threshold voltage at zero bias and the threshold voltage shift parameter. The comparison between the GA/PSO-based models and the experimental data shows a good agreement between the current-voltage curves. We chose the mean square error to solve the fundamental problem of adjustment of the optimized model to the experimental profile. The results of our study showed that PSO and GA can be used as powerful method to investigate and model the nanoscale devices. Moreover, the developed approach can be implemented into electronic simulators to analyze and investigate nanoelectronic circuits.

Keywords:

 

Carbon Nanotube Field Effect Transistor, Modeling, Parameter Extraction, Genetic Algorithm, Particle Swarm Optimization

References:

 

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Citations:

 

APA:
Menacer, F., Kadri, A., & Dibi, Z. (2020). Modeling of Carbon Nanotube Field Effect Transistors using Genetic Algorithm and Particle Swarm Optimization. International Journal of Advanced Science and Technology (IJAST), ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, 139, 29-38. doi: 10.33832/ijast.2020.139.04.

MLA:
Menacer, F., et al. “Modeling of Carbon Nanotube Field Effect Transistors using Genetic Algorithm and Particle Swarm Optimization.” International Journal of Advanced Science and Technology, ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, vol. 139, 2020, pp. 29-38. IJAST, http://article.nadiapub.com/IJAST/Vol139/4.html.

IEEE:
[1] F. Menacer, A. Kadri, and Z. Dibi "Modeling of Carbon Nanotube Field Effect Transistors using Genetic Algorithm and Particle Swarm Optimization." International Journal of Advanced Science and Technology (IJAST), ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, vol. 139, pp. 29-38, June 2020.