Kyoung-Il Do, Department of Electronics & Electrical Engineering, Dankook University, Korea
Tae-Ryong Park, Department of Computer Engineering, Seokyeong University, Korea/em>
This paper demonstrates a silicon carbide-based lateral silicon controlled rectifier (SCR) for use as an electrostatic discharge (ESD) protection device for high current ICs mounted on EVs or self-driving vehicles. The protection devices were designed with three split items and were fabricated with a line width of 0.5 µm. The protection devices were verified in terms of their electrical characteristics by using a transmission line pulse (TLP) system and a curve tracer. The measurements indicate that the devices have a trigger voltage of 165 V and a holding voltage of 40 V. The lateral SCR devices have a breakdown voltage (BV) of 82 V. In addition, the second breakdown current of the demonstrated SCR is above 18 A.
Electrostatic discharge (ESD) silicon carbide (SiC), silicon-controlled rectifier (SCR)
[1] Ashok Bindra, “Wide-Bandgap-Based Power Devices,” IEEE Power Electronics Magazine, (2015), pp. 42-47.
[2] Jin Wei, Huaping Jiang, Qimeng Jiang, and Kevin J. Chen, “Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications,” IEEE Trans. Electron Device., vol.63, no.6, (2016), pp. 2469-2473.
[3] Masaru Nagao, Masaki Ajioka, and Fumiaki Kawai, “SiC-Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles” IEEE Electr. Devices vol. 62, no. 2, (2005), pp. 278 - 285.
[4] S. Ji, Z. Zhang, and F. Wang, “Overview of high voltage sic power semiconductor devices: development and application,” CES Trans. Electr. Mach. Syst., vol. 1, no. 3, (2017), pp. 254-264.
[5] Qingwen Song, Shuai Yang, Guannan Tang, Chao Han, Yimeng Zhang, Xiaoyan Tang, Yimen Zhang, “4H-SiC Trench MOSFET with L-Shaped Gate,” IEEE Electr. Device Lett., vol. 37, no. 4, (2016), pp. 463-466.
[6] Diksha S. Ramteke, Manisha B. Gaikwad, “Isolated DC-DC Converter Fed DC Motor for Bidirectional Electric Vehicular Application” International Conference on Smart Electric Drives & Power, (2018), pp. 33-37.
[7] Kyoung-Il Do, Byung-Seok Lee, and Yong-Seo Koo, “Study on 4H-SiC GGNMOS Based ESD Protection Circuit with Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications” IEEE Electron Device Lett., vol. 40, no. 2, (2019), pp. 283-286.
[8] Shen-Li Chen, Yu-Ting Huang, Chih-Ying Yen, Kuei-Jyun Chen, Yi-Cih Wu, Jia-Ming Lin, Chih-Hung Yang, “ESD Protection Design for the 45-V pLDMOS-SCR (p-n-p-Arranged) Devices with Source-Discrete Distributions” IEEE Global Conference on Consumer Electronics (2018), pp. 1-2.
[9] C. W. Chan, F. Li, A. Sanchez, P. A. Mawby, and P. M. Gammon, “Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling,” IEEE Electron devices vol.64 no.9 (2017), pp. 3713-3718.
[10] Donald A. Neamen, “Semiconductor Physics and Device: basic principle, 3rd ed., (2003). pp. 691-701.
[11] B. B. Song and Y. S. Koo, “Low Ron and high robustness ESD protection design for low-voltage power clamp application,” Electron. Letter, vol. 52, no. 18, (2016), pp. 1554-1555.
[12] Bo-Bae Song, Kyoung-Il Do, And Yong-Seo Koo, “SCR-Based ESD Protection Using a Penta-Well for 5 V Applications,” IEEE Electron Device Society, vol.6, (2018), pp. 691-695.
APA:
Do, K.-I., & Park, T.-R. (2019). A Fabrication of 4H-Silicon Carbide based-Lateral SCR for ESD Protection Device. International Journal of Advanced Science and Technology (IJAST), ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, 126, 21-30. doi: 10.33832/ijast.2019.126.01.
MLA:
Do, Kyoung-Il, et al. “A Fabrication of 4H-Silicon Carbide based-Lateral SCR for ESD Protection Device.” International Journal of Advanced Science and Technology, ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, vol. 126, 2019, pp. 21-30. IJAST, http://article.nadiapub.com/IJAST/Vol126/3.html.
IEEE:
[1] K.-I. Do, and T.-R. Park, “A Fabrication of 4H-Silicon Carbide based-Lateral SCR for ESD Protection Device.” International Journal of Advanced Science and Technology (IJAST), ISSN: 2005-4238(Print); 2207-6360 (Online), NADIA, vol. 126, pp. 21-30, May 2019.
IJAST aims to facilitate and support research related to advanced science and technology and the applications. Our Journal provides a chance for academic and industry professionals to discuss recent progress in the areas of advanced science and technology.
